JEE Advanced Physics: Semiconductor Devices Practice Questions

12 questions with answers and step-by-step solutions. Tap any question to see the full worked solution.

Q1.
$In a common emitter transistor amplifier, the output signal is$
Easy
Q2.
$In a forward biased p-n junction, the width of the depletion layer$
Easy
Q3.
$The forbidden energy gap for germanium at room temperature is approximately$
Easy
Q4.
$Which of the following is a trivalent impurity used for doping silicon?$
Easy
Q5.
$In a p-n junction diode, the depletion layer width is 1 micrometer and the barrier potential is 0.5 V. The electric field intensity in the depletion region is:$
Medium
Q6.
$In a common emitter transistor amplifier, the input resistance is 500 ohms and the output resistance is 50 kilo-ohms. If the current gain is 50, the voltage gai$
Medium
Q7.
$A common base transistor circuit has an input resistance of 20 ohms and an output resistance of 100 kilo-ohms. If the alpha gain is 0.98, the voltage gain of th$
Medium
Q8.
$In an intrinsic semiconductor at room temperature, the number of free electrons is 10 to the power 16 per cubic meter. If the mobility of electrons is 0.13 and$
Medium
Q9.
$A common emitter transistor amplifier has a current gain of 50. If the input resistance is 1 kilo-ohm and the load resistance is 10 kilo-ohms, calculate the vol$
Hard
Q10.
$I nanin t r in s i cse mi co n d u c t or a t r oo m t e m p er a t u r e, t h e n u mb er o f f r eee l ec t r o n s i s 1 0^{1} 6 p er c u bi c m e t er . I f t h ese mi co n d u c t or i s d o p e d w i t h p e n t a v a l e n t im p u r i t$
Hard
Q11.
$In a common base configuration of a transistor, the emitter current is 1 mA and the collector current is 0.95 mA. Calculate the current gain alpha and the base$
Hard
Q12.
$In a p-n junction diode, the depletion region width is 0.5 micrometers and the barrier potential is 0.7 V. If an external reverse bias voltage of 5 V is applied$
Hard

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