JEE Advanced · PhysicsEasy
In a forward biased p-n junction diode, the width of the depletion layer
- A.Increases
- B.Decreases
- C.Remains constant
- D.Becomes infinite
Show correct answer & step-by-step solution
Correct answer: B — Decreases
Solution
- In a p-n junction, the depletion layer is formed by the diffusion of charge carriers across the junction.
- When forward bias is applied, the positive terminal is connected to the p-side and the negative terminal to the n-side.
- This external voltage creates an electric field that opposes the internal barrier potential.
- As a result, majority charge carriers are pushed toward the junction, which reduces the width of the depletion layer.
- Hence the answer is (B).
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