JEE Advanced · PhysicsEasy

In a forward biased p-n junction diode, the width of the depletion layer

  1. A.Increases
  2. B.Decreases
  3. C.Remains constant
  4. D.Becomes infinite
Show correct answer & step-by-step solution

Correct answer: BDecreases

Solution

  1. In a p-n junction, the depletion layer is formed by the diffusion of charge carriers across the junction.
  2. When forward bias is applied, the positive terminal is connected to the p-side and the negative terminal to the n-side.
  3. This external voltage creates an electric field that opposes the internal barrier potential.
  4. As a result, majority charge carriers are pushed toward the junction, which reduces the width of the depletion layer.
  5. Hence the answer is (B).

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In a forward biased p-n junction diode, the width of the depletion layer — JEE Advanced Physics Question with Solution | SolveGini