JEE Advanced · PhysicsEasy
In an intrinsic semiconductor at room temperature, the number of electrons and holes are related as
- A.
- B.
- C.
- D.
Show correct answer & step-by-step solution
Correct answer: C —
Solution
- An intrinsic semiconductor is a pure material where charge carriers are generated solely by thermal excitation.
- When a covalent bond breaks due to thermal energy, one free electron is released and one hole is created simultaneously.
- Because every electron-hole pair is produced as a single unit, the concentration of electrons must equal the concentration of holes .
- Therefore, the relationship is .
- Hence the answer is (C).
Attempt this question & track your score
Sign up free to answer, get instant scoring, and let SolveGini track which Physics topics you need to revise.
Attempt & Track Free →More Semiconductor Devices practice questions
- Which of the following materials is commonly used as a dopant to create a p-type semiconductor from silicon?
- The forbidden energy gap for a semiconductor is typically of the order of
- In a forward biased p-n junction diode, the width of the depletion layer
- The conductivity of a semiconductor increases with temperature because
- In a common emitter transistor amplifier, the input resistance is 500 ohm and the output resistance is 50 kilo-ohm. If t
- A Zener diode with a breakdown voltage of 10 V is used in a voltage regulator circuit. If the input voltage varies from
- In an intrinsic semiconductor at room temperature, the number of electrons and holes are equal. If the number of electro
- For a common base transistor circuit, the current amplification factor is 0.95. If the emitter current is 1 mA, the base
- In a common emitter transistor amplifier, the input resistance is 500 ohms and the output resistance is 50 kilo-ohms. If
- A Zener diode with a breakdown voltage of 10 volts is used in a voltage regulator circuit. If the input voltage varies f
- In an intrinsic semiconductor at room temperature, the number of electrons and holes are equal. If the temperature incre
- In a p-n junction diode, the depletion layer width is 1 micrometer and the potential barrier is 0.7 volts. What is the m