JEE Main Physics: Semiconductor Devices Practice Questions

24 questions with answers and step-by-step solutions. Tap any question to see the full worked solution.

  1. Q1.
    In an intrinsic semiconductor at room temperature, the number of electrons and holes are related as
    Easy
  2. Q2.
    Which of the following materials is commonly used as a dopant to create a p-type semiconductor from silicon?
    Easy
  3. Q3.
    The forbidden energy gap for a semiconductor is typically of the order of
    Easy
  4. Q4.
    In a forward biased p-n junction diode, the width of the depletion layer
    Easy
  5. Q5.
    The conductivity of a semiconductor increases with temperature because
    Easy
  6. Q6.
    In a common emitter transistor amplifier, the input resistance is 500 ohm and the output resistance is 50 kilo-ohm. If the current gain is 50, the voltage gain
    Medium
  7. Q7.
    A Zener diode with a breakdown voltage of 10 V is used in a voltage regulator circuit. If the input voltage varies from 12 V to 16 V and the load resistance is
    Medium
  8. Q8.
    In an intrinsic semiconductor at room temperature, the number of electrons and holes are equal. If the number of electrons is 10 to the power 16 per cubic meter
    Medium
  9. Q9.
    For a common base transistor circuit, the current amplification factor is 0.95. If the emitter current is 1 mA, the base current is
    Medium
  10. Q10.
    In a common emitter transistor amplifier, the input resistance is 500 ohms and the output resistance is 50 kilo-ohms. If the current gain is 50, what is the vol
    Hard
  11. Q11.
    A Zener diode with a breakdown voltage of 10 volts is used in a voltage regulator circuit. If the input voltage varies from 12 volts to 16 volts and the load cu
    Hard
  12. Q12.
    In an intrinsic semiconductor at room temperature, the number of electrons and holes are equal. If the temperature increases, how does the Fermi level shift?
    Hard
  13. Q13.
    In a p-n junction diode, the depletion layer width is 1 micrometer and the potential barrier is 0.7 volts. What is the magnitude of the electric field in the de
    Hard
  14. Q14.
    In a common emitter transistor amplifier, the input resistance is 500 ohm and the output resistance is 50 kilo-ohm. If the current gain is 50, what is the volta
    Medium
  15. Q15.
    A Zener diode with a breakdown voltage of 10 V is connected in a voltage regulator circuit with a series resistance of 200 ohm and a load resistance of 1 kilo-o
    Medium
  16. Q16.
    For a common base transistor configuration, the current amplification factor is 0.95. If the emitter current is 1 mA, what is the base current?
    Medium
  17. Q17.
    In an intrinsic semiconductor at room temperature, the number of electrons and holes are equal. If the number density of charge carriers is 1.5 times 10 to the
    Medium
  18. Q18.
    A full wave rectifier circuit uses two diodes. If the input frequency is 50 Hz, what is the output ripple frequency?
    Medium
  19. Q19.
    A common base amplifier has an input resistance of 20 ohms and an output resistance of 100 kilo-ohms. If the alpha current gain is 0.98, what is the power gain
    Hard
  20. Q20.
    In a p-n junction diode, the depletion layer width is 1 micrometer and the potential barrier is 0.5 volts. What is the magnitude of the electric field in the de
    Hard
  21. Q21.
    In an intrinsic semiconductor at room temperature, the number of free electrons is 10 to the power 16 per cubic meter. If the mobility of electrons is 0.13 squa
    Hard
  22. Q22.
    The forbidden energy gap for a semiconductor is approximately
    Easy
  23. Q23.
    In a forward biased p-n junction diode, the width of the depletion region
    Easy
  24. Q24.
    In a common emitter transistor configuration, the ratio of collector current to base current is known as
    Easy

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Semiconductor Devices — JEE Main Physics Practice Questions with Solutions | SolveGini